All MOSFET. SPA21N50C3 Datasheet

 

SPA21N50C3 Datasheet and Replacement


   Type Designator: SPA21N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220FP
 

 SPA21N50C3 substitution

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SPA21N50C3 Datasheet (PDF)

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SPA21N50C3

SPP21N50C3SPI21N50C3, SPA21N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 21 A Worldwide best RDS(on) in TO 220PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21 Ultra low effective capacitances Improved transconductance

Datasheet: SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , IRLB4132 , SPB80N06S-08 , SPB02N60C3 , SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 .

History: SI4622DY | VBZL80N03

Keywords - SPA21N50C3 MOSFET datasheet

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