All MOSFET. SPB03N60S5 Datasheet

 

SPB03N60S5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB03N60S5
   Marking Code: 03N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.4 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO263

 SPB03N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB03N60S5 Datasheet (PDF)

 ..1. Size:347K  infineon
 spb03n60s5.pdf

SPB03N60S5 SPB03N60S5

SPB03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB03N60S5 PG-TO263 Q67040-S4197 03N60S5Maximum RatingsPara

 6.1. Size:484K  infineon
 spb03n60c3.pdf

SPB03N60S5 SPB03N60S5

VDS Tjmax G G

 6.2. Size:258K  inchange semiconductor
 spb03n60c3.pdf

SPB03N60S5 SPB03N60S5

Isc N-Channel MOSFET Transistor SPB03N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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