SPB12N50C3 Specs and Replacement

Type Designator: SPB12N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

SPB12N50C3 substitution

- MOSFET ⓘ Cross-Reference Search

 

SPB12N50C3 datasheet

 ..1. Size:1694K  infineon
 spb12n50c3.pdf pdf_icon

SPB12N50C3

SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11.6 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance - Type Package Ordering Code Marking 12N50C3 SPB12N50C3 PG-TO263 Q67040-S4641 Maximum ... See More ⇒

Detailed specifications: SPB04N60S5, SPB07N60C3, SPB07N60S5, SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, AO3407, SPB16N50C3, SPB17N80C3, SPB18P06PG, SPB20N60C3, SPB20N60S5, SPB21N50C3, SPB80N10LG, SPB80P06PG

Keywords - SPB12N50C3 MOSFET specs

 SPB12N50C3 cross reference

 SPB12N50C3 equivalent finder

 SPB12N50C3 pdf lookup

 SPB12N50C3 substitution

 SPB12N50C3 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.