SPB12N50C3 Datasheet and Replacement
Type Designator: SPB12N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO263
SPB12N50C3 substitution
SPB12N50C3 Datasheet (PDF)
spb12n50c3.pdf

SPB12N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11.6 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance-Type Package Ordering Code Marking12N50C3SPB12N50C3 PG-TO263 Q67040-S4641Maximum
Datasheet: SPB04N60S5 , SPB07N60C3 , SPB07N60S5 , SPB08P06PG , SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , 7N60 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG .
History: ELM18806BA | QM3004U1 | AM2307PE | BSC076N06NS3G | SVF7N60CK | IPA093N06N3G | PA606BMG
Keywords - SPB12N50C3 MOSFET datasheet
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History: ELM18806BA | QM3004U1 | AM2307PE | BSC076N06NS3G | SVF7N60CK | IPA093N06N3G | PA606BMG



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