All MOSFET. SPB12N50C3 Datasheet

 

SPB12N50C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB12N50C3
   Marking Code: 12N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 11.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO263

 SPB12N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB12N50C3 Datasheet (PDF)

 ..1. Size:1694K  infineon
 spb12n50c3.pdf

SPB12N50C3 SPB12N50C3

SPB12N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11.6 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance-Type Package Ordering Code Marking12N50C3SPB12N50C3 PG-TO263 Q67040-S4641Maximum

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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