SPB17N80C3 Specs and Replacement

Type Designator: SPB17N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO263

SPB17N80C3 substitution

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SPB17N80C3 datasheet

 ..1. Size:426K  infineon
 spb17n80c3.pdf pdf_icon

SPB17N80C3

SPB17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS new revolutionary high voltage technology R @ Tj = 25 C 0.29 DS(on)max Extreme dv/dt rated Q 91 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effec... See More ⇒

 ..2. Size:258K  inchange semiconductor
 spb17n80c3.pdf pdf_icon

SPB17N80C3

Isc N-Channel MOSFET Transistor SPB17N80C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: SPB07N60S5, SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3, 20N50, SPB18P06PG, SPB20N60C3, SPB20N60S5, SPB21N50C3, SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3

Keywords - SPB17N80C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs