All MOSFET. SPB17N80C3 Datasheet

 

SPB17N80C3 Datasheet and Replacement


   Type Designator: SPB17N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO263
 

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SPB17N80C3 Datasheet (PDF)

 ..1. Size:426K  infineon
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SPB17N80C3

SPB17N80C3CoolMOS Power TransistorProduct SummaryFeaturesV 800 VDS new revolutionary high voltage technologyR @ Tj = 25C 0.29DS(on)max Extreme dv/dt ratedQ 91 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effec

 ..2. Size:258K  inchange semiconductor
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SPB17N80C3

Isc N-Channel MOSFET Transistor SPB17N80C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: SPB07N60S5 , SPB08P06PG , SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , IRF530 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 , SPD02N50C3 .

History: HM60N75K | KHC21025 | IPT65R105G7 | HGA082N10M | HM60N20D | CS7000 | SI7149ADP

Keywords - SPB17N80C3 MOSFET datasheet

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