BF410A Specs and Replacement

Type Designator: BF410A

Type of Transistor: FET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.003 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 0.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5000 Ohm

Package: TO92

BF410A substitution

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BF410A datasheet

 ..1. Size:32K  philips
 bf410a 410b 410c 410d.pdf pdf_icon

BF410A

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = sou... See More ⇒

Detailed specifications: BF245A, BF245B, BF245C, BF327, BF350, BF351, BF352, BF353, K3569, BF410B, BF410C, BF410D, BF510, BF511, BF512, BF513, BF545A

Keywords - BF410A MOSFET specs

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