All MOSFET. BF410A Datasheet

 

BF410A Datasheet and Replacement


   Type Designator: BF410A
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.003 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5000 Ohm
   Package: TO92
 

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BF410A Datasheet (PDF)

 ..1. Size:32K  philips
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BF410A

DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou

Datasheet: BF245A , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , K3569 , BF410B , BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A .

History: AMA920N | IRF7478Q | IRF7470

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