SPB21N50C3 Specs and Replacement

Type Designator: SPB21N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO263

SPB21N50C3 substitution

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SPB21N50C3 datasheet

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SPB21N50C3

SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS(on) 0.19 Feature ID 21 A New revolutionary high voltage technology PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 Maximum Rating... See More ⇒

Detailed specifications: SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3, SPB17N80C3, SPB18P06PG, SPB20N60C3, SPB20N60S5, IRFZ24N, SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3, SPD02N60C3, SPD02N60S5, SPD02N80C3, SPD03N50C3

Keywords - SPB21N50C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs