All MOSFET. SPD01N60C3 Datasheet

 

SPD01N60C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD01N60C3

Marking Code: 01N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 11 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 0.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.9 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 6 Ohm

Package: TO252

SPD01N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD01N60C3 Datasheet (PDF)

0.1. spd01n60c3 spu01n60c3.pdf Size:276K _1

SPD01N60C3 SPD01N60C3

SPU01N60C3 Rev. 2.0 SPD01N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 6 Ω • New revolutionary high voltage technology ID 0.8 A • Ultra low gate charge P-TO252 P-TO251-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPU01N60C3 P-TO251-3-1 Q6

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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