SPD01N60C3 Spec and Replacement
Type Designator: SPD01N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 11 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO252
SPD01N60C3 substitution
SPD01N60C3 Specs
spd01n60c3 spu01n60c3.pdf
SPU01N60C3 Rev. 2.0 SPD01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 6 New revolutionary high voltage technology ID 0.8 A Ultra low gate charge P-TO252 P-TO251-3-1 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPU01N60C3 P-TO251-3-1 Q6... See More ⇒
Detailed specifications: SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , P60NF06 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 .
History: SMG2336N
Keywords - SPD01N60C3 MOSFET specs
SPD01N60C3 cross reference
SPD01N60C3 equivalent finder
SPD01N60C3 lookup
SPD01N60C3 substitution
SPD01N60C3 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
