All MOSFET. SPD01N60C3 Datasheet

 

SPD01N60C3 Datasheet and Replacement


   Type Designator: SPD01N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO252
 

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SPD01N60C3 Datasheet (PDF)

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SPD01N60C3

SPU01N60C3Rev. 2.0SPD01N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 6 New revolutionary high voltage technologyID 0.8 A Ultra low gate chargeP-TO252 P-TO251-3-1 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPU01N60C3 P-TO251-3-1 Q6

Datasheet: SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , AO3401 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 .

History: NTMS4801N | H7N0310LS | AP4519GED | 2N6969JANTXV | BUK9604-40A

Keywords - SPD01N60C3 MOSFET datasheet

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