BF410B PDF and Equivalents Search

 

BF410B Specs and Replacement

Type Designator: BF410B

Type of Transistor: FET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.007 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 0.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2000 Ohm

Package: TO92

BF410B substitution

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BF410B datasheet

 9.1. Size:32K  philips
 bf410a 410b 410c 410d.pdf pdf_icon

BF410B

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = sou... See More ⇒

Detailed specifications: BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , IRFP260 , BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B .

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