BF410B MOSFET. Datasheet pdf. Equivalent
Type Designator: BF410B
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Drain Current |Id|: 0.007 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 0.5 pF
Maximum Drain-Source On-State Resistance (Rds): 2000 Ohm
Package: TO92
BF410B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF410B Datasheet (PDF)
bf410a 410b 410c 410d.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou
Datasheet: BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , 5N60 , BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B .



LIST
Last Update
MOSFET: MEE7816S-G | MEE7816AS-G | MEE7636-G | MEE7630-G | MEE7298-G | MEE7296-G | MEE72962-G | MEE7292-G | MEE6240T | MEE4298T | MEE4298K-G | MEE4298HT | MEE4298-G | MEE4294T2 | MEE4294P-G | MEE4294P2-G