All MOSFET. SPD04N60C3 Datasheet

 

SPD04N60C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD04N60C3

Marking Code: 04N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Rise Time (tr): 2.5 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm

Package: TO252

SPD04N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04N60C3 Datasheet (PDF)

0.1. spd04n60c3 spu04n60c3.pdf Size:744K _infineon

SPD04N60C3
SPD04N60C3

 VDS Tjmax Ω • • G G • • • • G G

6.1. spd04n60s5 spu04n60s5.pdf Size:268K _1

SPD04N60C3
SPD04N60C3

SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.95 Ω • New revolutionary high voltage technology ID 4.5 A • Ultra low gate charge P-TO252. P-TO251. • Periodic avalanche rated • Extreme dv/dt rated 2 3 • Ultra low effective capacitances 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-T

 8.1. spd04n50c3.pdf Size:769K _infineon

SPD04N60C3
SPD04N60C3

 VDS Tjmax Ω • • G • • • • G

8.2. spd04n80c3.pdf Size:491K _infineon

SPD04N60C3
SPD04N60C3

SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 1.3 Ω DS(on)max • Extreme dv/dt rated Q 23 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO252-3 • Ultra low gate charge • Ultra low effe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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