SPD04N60C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD04N60C3
Marking Code: 04N60C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95
Ohm
Package:
TO252
SPD04N60C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD04N60C3
Datasheet (PDF)
..2. Size:245K inchange semiconductor
spd04n60c3.pdf 
isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
6.1. Size:268K 1
spd04n60s5 spu04n60s5.pdf
SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-T
6.2. Size:244K inchange semiconductor
spd04n60s5.pdf
isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
8.1. Size:389K infineon
spd04n80c3.pdf
SPD04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3WDS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)PG-TO252-3
8.2. Size:733K infineon
spd04n50c3.pdf
VDS Tjmax G ; available in Halogen free mold compounda) G
8.3. Size:245K inchange semiconductor
spd04n80c3.pdf
isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3FEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8
8.4. Size:244K inchange semiconductor
spd04n50c3.pdf
isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 560
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
