All MOSFET. BF410C Datasheet

 

BF410C Datasheet and Replacement


   Type Designator: BF410C
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.012 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: TO92
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BF410C Datasheet (PDF)

 9.1. Size:32K  philips
 bf410a 410b 410c 410d.pdf pdf_icon

BF410C

DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou

Datasheet: BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , K4145 , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C .

History: RFD3055LE | HM12N60 | NTR1P02LT1G | AOB12N65L | AM4935P | APT4014BVFRG | APT10021JFLL

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