BF410C MOSFET. Datasheet pdf. Equivalent
Type Designator: BF410C
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Drain Current |Id|: 0.012 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 0.5 pF
Maximum Drain-Source On-State Resistance (Rds): 1000 Ohm
Package: TO92
BF410C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF410C Datasheet (PDF)
bf410a 410b 410c 410d.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou
Datasheet: BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , 12N60 , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C .
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