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SPD09P06PLG Specs and Replacement


   Type Designator: SPD09P06PLG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 168 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO252
 

 SPD09P06PLG substitution

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SPD09P06PLG Specs

 4.1. Size:576K  infineon
 spd09p06pl.pdf pdf_icon

SPD09P06PLG

SPD09P06PL G SIPMOS =Power-Transistor = == Product Summary Feature VDS -60 V P-Channel P-channel RDS(on) 0.25 Enhancement mode Enhancement mode ID -9.7 A Logic Level Logic Level prueb 175 C operating temperature PG-TO252-3 175 C operating temperature Avalanche rated Avalanche rated dv/dt rated dv/dt rated Pb-free lead ... See More ⇒

 9.1. Size:891K  cn vbsemi
 spd09n05.pdf pdf_icon

SPD09P06PLG

SPD09N05 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

Detailed specifications: SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , IRFP064N , SPD15P10PG , SPD15P10PLG , SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G .

Keywords - SPD09P06PLG MOSFET specs

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