All MOSFET. SPD09P06PLG Datasheet

 

SPD09P06PLG MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD09P06PLG

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 168 nS

Drain-Source Capacitance (Cd): 103 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO252

SPD09P06PLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD09P06PLG Datasheet (PDF)

4.1. spd09p06pl.pdf Size:576K _infineon

SPD09P06PLG
SPD09P06PLG

SPD09P06PL G    SIPMOS=Power-Transistor = == Product Summary Feature VDS -60 V P-Channel • P-channel RDS(on) 0.25 Enhancement mode • Enhancement mode ID -9.7 A • Logic Level Logic Level prueb • 175°C operating temperature PG-TO252-3 175°C operating temperature • Avalanche rated Avalanche rated • dv/dt rated dv/dt rated • Pb-free lead

Datasheet: SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , 2SK1058 , SPD15P10PG , SPD15P10PLG , SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G .

 

 
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