SPD18P06PG Specs and Replacement

Type Designator: SPD18P06PG

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO252

SPD18P06PG substitution

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SPD18P06PG datasheet

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SPD18P06PG

SPD18P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -18.6 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliant Pin 1 PIN 2/4 PIN 3 Type Package G D S SPD18P06P G PG-TO252-3 Maximum Ratin... See More ⇒

Detailed specifications: SPD07N20G, SPD07N60C3, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG, SPD15P10PLG, IRFZ44N, SPD30N03S2L-07G, SPD30N03S2L-10G, SPD30N03S2L-20G, SPD30P06PG, SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG, SPI80N06S-08

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.