All MOSFET. SPD18P06PG Datasheet

 

SPD18P06PG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD18P06PG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO252

 SPD18P06PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD18P06PG Datasheet (PDF)

 5.1. Size:561K  infineon
 spd18p06p.pdf

SPD18P06PG SPD18P06PG

SPD18P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -18.6 A dv/dt rated 175C operating temperature Pb-free lead plating; RoHS compliantPin 1 PIN 2/4 PIN 3Type PackageG D SSPD18P06P G PG-TO252-3Maximum Ratin

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CHM7101JGP | SGSP364

 

 
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