All MOSFET. SPD18P06PG Datasheet

 

SPD18P06PG Datasheet and Replacement


   Type Designator: SPD18P06PG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO252
 

 SPD18P06PG substitution

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SPD18P06PG Datasheet (PDF)

 5.1. Size:561K  infineon
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SPD18P06PG

SPD18P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -18.6 A dv/dt rated 175C operating temperature Pb-free lead plating; RoHS compliantPin 1 PIN 2/4 PIN 3Type PackageG D SSPD18P06P G PG-TO252-3Maximum Ratin

Datasheet: SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG , IRFZ44N , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 .

History: RSD140P06FRA | BUK761R8-30C

Keywords - SPD18P06PG MOSFET datasheet

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