SPI12N50C3 Specs and Replacement

Type Designator: SPI12N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO262

SPI12N50C3 substitution

- MOSFET ⓘ Cross-Reference Search

 

SPI12N50C3 datasheet

 ..1. Size:844K  1
 spa12n50c3 spi12n50c3 spp12n50c3.pdf pdf_icon

SPI12N50C3

SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11.6 A Ultra low gate charge PG-TO220-3-31 PG-TO262- PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 Ultra low effective capacitances 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3... See More ⇒

Detailed specifications: SPI07N60S5, SPI07N65C3, SPI08N50C3, SPI08N80C3, SPI11N60C3, SPI11N60CFD, SPI11N60S5, SPI11N65C3, IRF3710, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, SPI20N65C3, SPI21N50C3

Keywords - SPI12N50C3 MOSFET specs

 SPI12N50C3 cross reference

 SPI12N50C3 equivalent finder

 SPI12N50C3 pdf lookup

 SPI12N50C3 substitution

 SPI12N50C3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility