SPI16N50C3 Specs and Replacement

Type Designator: SPI16N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO262

SPI16N50C3 substitution

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SPI16N50C3 datasheet

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 spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf pdf_icon

SPI16N50C3

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Detailed specifications: SPI11N60C3, SPI11N60CFD, SPI11N60S5, SPI11N65C3, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, 2N7000, SPI20N60C3, SPI20N60CFD, SPI20N65C3, SPI21N50C3, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3

Keywords - SPI16N50C3 MOSFET specs

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