All MOSFET. SPI21N50C3 Datasheet

 

SPI21N50C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPI21N50C3
   Marking Code: 21N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO262

 SPI21N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPI21N50C3 Datasheet (PDF)

 ..1. Size:751K  infineon
 spp21n50c3 spi21n50c3 spa21n50c3.pdf

SPI21N50C3 SPI21N50C3

SPP21N50C3SPI21N50C3, SPA21N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 21 A Worldwide best RDS(on) in TO 220PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21 Ultra low effective capacitances Improved transconductance

 ..2. Size:215K  inchange semiconductor
 spi21n50c3.pdf

SPI21N50C3 SPI21N50C3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI21N50C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistanceImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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