SPI21N50C3 Specs and Replacement

Type Designator: SPI21N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO262

SPI21N50C3 substitution

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SPI21N50C3 datasheet

 ..1. Size:751K  infineon
 spp21n50c3 spi21n50c3 spa21n50c3.pdf pdf_icon

SPI21N50C3

SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 21 A Worldwide best RDS(on) in TO 220 PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 Ultra low effective capacitances Improved transconductance ... See More ⇒

 ..2. Size:215K  inchange semiconductor
 spi21n50c3.pdf pdf_icon

SPI21N50C3

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Detailed specifications: SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, SPI20N65C3, IRFP250N, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5

Keywords - SPI21N50C3 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility