BF512 Datasheet and Replacement
Type Designator: BF512
Type of Transistor: FET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.012 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
BF512 Datasheet (PDF)
bf510 bf511 bf512 bf513 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF510 to 513N-channel silicon field-effecttransistorsDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planarBF510 = S6pepitaxial junction field-effectBF511 = S7pt
bf510 bf511 bf512 bf513.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF510 to 513N-channel silicon field-effect transistorsProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planar BF510 = S6pepitaxial junction field-effect BF511 = S7ptransistors in the miniature plastic BF51
Datasheet: BF352 , BF353 , BF410A , BF410B , BF410C , BF410D , BF510 , BF511 , AON7506 , BF513 , BF545A , BF545B , BF545C , BF556A , BF556B , BF556C , BF805 .
History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE
Keywords - BF512 MOSFET datasheet
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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE



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