All MOSFET. SPP12N50C3 Datasheet

 

SPP12N50C3 Datasheet and Replacement


   Type Designator: SPP12N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220
 

 SPP12N50C3 substitution

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SPP12N50C3 Datasheet (PDF)

 ..1. Size:844K  1
 spa12n50c3 spi12n50c3 spp12n50c3.pdf pdf_icon

SPP12N50C3

SPP12N50C3SPI12N50C3, SPA12N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11.6 A Ultra low gate chargePG-TO220-3-31 PG-TO262- PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 Ultra low effective capacitances 2 3211P-TO220-3-31 Improved transconductanceP-TO220-3

 ..2. Size:248K  inchange semiconductor
 spp12n50c3.pdf pdf_icon

SPP12N50C3

isc N-Channel MOSFET Transistor SPP12N50C3ISPP12N50C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM

Datasheet: SPP08N50C3 , SPP08N80C3 , SPP08P06PH , SPP11N60C3 , SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , AO4407 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , SPP17N80C3 , SPP18P06PH .

History: AP9561AGH-HF | FQD2N60TF

Keywords - SPP12N50C3 MOSFET datasheet

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