SPP21N50C3 Datasheet and Replacement
Type Designator: SPP21N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
SPP21N50C3 substitution
SPP21N50C3 Datasheet (PDF)
spp21n50c3 spi21n50c3 spa21n50c3.pdf

SPP21N50C3SPI21N50C3, SPA21N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 21 A Worldwide best RDS(on) in TO 220PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21 Ultra low effective capacitances Improved transconductance
spp21n50c3.pdf

isc N-Channel MOSFET Transistor SPP21N50C3ISPP21N50C3FEATURESStatic drain-source on-resistance:RDS(on) 190mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM
Datasheet: SPP15P10PLH , SPP16N50C3 , SPP17N80C3 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , STP80NF70 , SPP24N60C3 , SPP24N60CFD , SPP80P06PH , SPS01N60C3 , SPS02N60C3 , SPS03N60C3 , SPS04N60C3 , SPU01N60C3 .
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