SPP21N50C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP21N50C3
Marking Code: 21N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO220
SPP21N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP21N50C3 Datasheet (PDF)
spp21n50c3 spi21n50c3 spa21n50c3.pdf
SPP21N50C3SPI21N50C3, SPA21N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 21 A Worldwide best RDS(on) in TO 220PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21 Ultra low effective capacitances Improved transconductance
spp21n50c3.pdf
isc N-Channel MOSFET Transistor SPP21N50C3ISPP21N50C3FEATURESStatic drain-source on-resistance:RDS(on) 190mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
