SPP21N50C3 Specs and Replacement
Type Designator: SPP21N50C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
SPP21N50C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPP21N50C3 datasheet
spp21n50c3 spi21n50c3 spa21n50c3.pdf
SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 21 A Worldwide best RDS(on) in TO 220 PG-TO220FP P G-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 Ultra low effective capacitances Improved transconductance ... See More ⇒
spp21n50c3.pdf
isc N-Channel MOSFET Transistor SPP21N50C3 ISPP21N50C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM ... See More ⇒
Detailed specifications: SPP15P10PLH, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, 10N65, SPP24N60C3, SPP24N60CFD, SPP80P06PH, SPS01N60C3, SPS02N60C3, SPS03N60C3, SPS04N60C3, SPU01N60C3
Keywords - SPP21N50C3 MOSFET specs
SPP21N50C3 cross reference
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SPP21N50C3 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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