SPS01N60C3 Specs and Replacement

Type Designator: SPS01N60C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO251-SL

SPS01N60C3 substitution

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SPS01N60C3 datasheet

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SPS01N60C3

SPS01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 6 New revolutionary high voltage technology ID 0.8 A Ultra low gate charge PG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPS01N60C3 PG-TO251-3-11 - 01N60C3 Maximum Ratings ... See More ⇒

Detailed specifications: SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD, SPP80P06PH, AO3407, SPS02N60C3, SPS03N60C3, SPS04N60C3, SPU01N60C3, SPU02N60C3, SPU02N60S5, SPU03N60C3, SPU03N60S5

Keywords - SPS01N60C3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.