All MOSFET. SPS01N60C3 Datasheet

 

SPS01N60C3 Datasheet and Replacement


   Type Designator: SPS01N60C3
   Marking Code: 01N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.9 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO251-SL
 

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SPS01N60C3 Datasheet (PDF)

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SPS01N60C3

SPS01N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 6 New revolutionary high voltage technologyID 0.8 A Ultra low gate chargePG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPS01N60C3 PG-TO251-3-11 - 01N60C3Maximum Ratings

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