SPS03N60C3 Specs and Replacement
Type Designator: SPS03N60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251-SL
SPS03N60C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPS03N60C3 datasheet
sps03n60c3.pdf
SPS03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 1.4 New revolutionary high voltage technology ID 3.2 A Ultra low gate charge PG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPS03N60C3 PG-TO251-3-11 03N60C3 Maximum Ratings Para... See More ⇒
Detailed specifications: SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD, SPP80P06PH, SPS01N60C3, SPS02N60C3, 20N50, SPS04N60C3, SPU01N60C3, SPU02N60C3, SPU02N60S5, SPU03N60C3, SPU03N60S5, SPU04N60C3, SPU04N60S5
Keywords - SPS03N60C3 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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