All MOSFET. SPS03N60C3 Datasheet

 

SPS03N60C3 Datasheet and Replacement


   Type Designator: SPS03N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251-SL
 

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SPS03N60C3 Datasheet (PDF)

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SPS03N60C3

SPS03N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPS03N60C3 PG-TO251-3-11 03N60C3Maximum RatingsPara

Datasheet: SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD , SPP80P06PH , SPS01N60C3 , SPS02N60C3 , 2N60 , SPS04N60C3 , SPU01N60C3 , SPU02N60C3 , SPU02N60S5 , SPU03N60C3 , SPU03N60S5 , SPU04N60C3 , SPU04N60S5 .

History: CSD17552Q5A | RJP020N06T100 | SSM4232GM | UTT4425 | SPP08P06P | 2SJ550L | AP9T16AGH

Keywords - SPS03N60C3 MOSFET datasheet

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