SPS04N60C3 Specs and Replacement
Type Designator: SPS04N60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO251-SL
SPS04N60C3 substitution
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SPS04N60C3 datasheet
Detailed specifications: SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD, SPP80P06PH, SPS01N60C3, SPS02N60C3, SPS03N60C3, IRF520, SPU01N60C3, SPU02N60C3, SPU02N60S5, SPU03N60C3, SPU03N60S5, SPU04N60C3, SPU04N60S5, SPU07N60C3
Keywords - SPS04N60C3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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