SPU02N60C3 Datasheet and Replacement
Type Designator: SPU02N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO251
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SPU02N60C3 Datasheet (PDF)
spu02n60c3.pdf
isc N-Channel MOSFET Transistor SPU02N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
spu02n60s5 spd02n60s5.pdf
SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2
spd02n60s5 spu02n60s5.pdf
SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP2302GN | 2SK4096LS | WML11N80M3 | ELM16409EA | FSS23A4D | CPC3720 | UT8205A
Keywords - SPU02N60C3 MOSFET datasheet
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History: AP2302GN | 2SK4096LS | WML11N80M3 | ELM16409EA | FSS23A4D | CPC3720 | UT8205A
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