SPU07N60C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPU07N60C3
Marking Code: 07N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 7.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Rise Time (tr): 3.5 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO251
SPU07N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPU07N60C3 Datasheet (PDF)
0.1. spd07n60c3 spu07n60c3.pdf 
Size:975K _infineon
VDS Tjmax Ω • • G G • • • • •
6.1. spd07n60s5 spu07n60s5.pdf Size:888K _infineon
SPU07N60S5 SPD07N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.6 Ω • New revolutionary high voltage technology ID 7.3 A • Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 • Ultra low gate charge • Periodic avalanche rated 2 3 • Extreme dv/dt rated 3 1 2 1 • Ultra low effective capacitances • Improved transconductance Type Packag
8.1. spu07n20g.pdf Size:610K _infineon
SPD 07N20 G SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V VDS • N channel Drain-Source on-state resistance 0.4 RDS(on) Ω • Enhancement mode Continuous drain current 7 A ID • Avalanche rated • dv/dt rated 2 1 1 3 2 3 Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-
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