All MOSFET. SPU07N60C3 Datasheet

 

SPU07N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPU07N60C3
   Marking Code: 07N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251

 SPU07N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPU07N60C3 Datasheet (PDF)

 ..1. Size:975K  infineon
 spd07n60c3 spu07n60c3.pdf

SPU07N60C3 SPU07N60C3

VDS Tjmax G G

 ..2. Size:261K  inchange semiconductor
 spu07n60c3.pdf

SPU07N60C3 SPU07N60C3

isc N-Channel MOSFET Transistor SPU07N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 6.1. Size:888K  infineon
 spd07n60s5 spu07n60s5.pdf

SPU07N60C3 SPU07N60C3

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag

 6.2. Size:261K  inchange semiconductor
 spu07n60s5.pdf

SPU07N60C3 SPU07N60C3

isc N-Channel MOSFET Transistor SPU07N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:610K  infineon
 spu07n20g.pdf

SPU07N60C3 SPU07N60C3

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt rated2 1 1 3 2 3 Pin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-

 8.2. Size:260K  inchange semiconductor
 spu07n20g.pdf

SPU07N60C3 SPU07N60C3

isc N-Channel MOSFET Transistor SPU07N20GFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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