VDS Tjmax G G

isc N-Channel MOSFET Transistor SPU07N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag

isc N-Channel MOSFET Transistor SPU07N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt rated2 1 1 3 2 3 Pin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-

isc N-Channel MOSFET Transistor SPU07N20GFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U