SPW12N50C3 Specs and Replacement

Type Designator: SPW12N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO247

SPW12N50C3 substitution

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SPW12N50C3 datasheet

 ..1. Size:763K  infineon
 spw12n50c3.pdf pdf_icon

SPW12N50C3

VDS Tjmax G G ... See More ⇒

 ..2. Size:244K  inchange semiconductor
 spw12n50c3.pdf pdf_icon

SPW12N50C3

isc N-Channel MOSFET Transistor SPW12N50C3 ISPW12N50C3 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50... See More ⇒

Detailed specifications: SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3, SPW11N60CFD, SPW11N60S5, SPW11N80C3, IRF830, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3

Keywords - SPW12N50C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs