All MOSFET. SPW12N50C3 Datasheet

 

SPW12N50C3 Datasheet and Replacement


   Type Designator: SPW12N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO247
 

 SPW12N50C3 substitution

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SPW12N50C3 Datasheet (PDF)

 ..1. Size:763K  infineon
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SPW12N50C3

VDS Tjmax G G

 ..2. Size:244K  inchange semiconductor
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SPW12N50C3

isc N-Channel MOSFET Transistor SPW12N50C3ISPW12N50C3FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

Datasheet: SPU04N60S5 , SPU07N60C3 , SPU07N60S5 , SPW07N60CFD , SPW11N60C3 , SPW11N60CFD , SPW11N60S5 , SPW11N80C3 , IRF830 , SPW15N60C3 , SPW15N60CFD , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 .

History: AONS66609T

Keywords - SPW12N50C3 MOSFET datasheet

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