BF556B Datasheet and Replacement
Type Designator: BF556B
Type of Transistor: FET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.013 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: SOT23
BF556B substitution
BF556B Datasheet (PDF)
bf556a bf556b bf556c 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha
bf556a bf556b bf556c.pdf
BF556A; BF556B; BF556CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2
bf556a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha
Datasheet: BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A , AON7506 , BF556C , BF805 , BF861A , BF861B , BF861C , BF862 , BF900 , BF901 .
Keywords - BF556B MOSFET datasheet
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