BF556B FET Datasheet: N-Ch, 30V, 0.013A. Full specification with pinout and replacement list

BF556B Specs and Replacement

   Type Designator: BF556B
   Type of Transistor: FET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.013 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: SOT23

BF556B substitution

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BF556B datasheet

..1. Size:68K philips
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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha... See More ⇒

..2. Size:71K philips
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BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 ... See More ⇒

9.1. Size:100K philips
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