SPW52N50C3 MOSFET Datasheet: N-Ch, 500V, 52A. Full specification with pinout and replacement list

SPW52N50C3 Specs and Replacement

Type Designator: SPW52N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO247

SPW52N50C3 substitution

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SPW52N50C3 datasheet

..1. Size:609K infineon
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SPW52N50C3 CoolMOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.07 New revolutionary high voltage technology ID 52 A Worldwide best RDS(on) in TO-247 PG-TO247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Marking SPW52N50C3 PG-TO247 52N50C3 Maxim... See More ⇒

..2. Size:243K inchange semiconductor
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isc N-Channel MOSFET Transistor SPW52N50C3 ISPW52N50C3 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500... See More ⇒

Detailed specifications: SPW24N60C3, SPW24N60CFD, SPW32N50C3, SPW35N60C3, SPW35N60CFD, SPW47N60C3, SPW47N60CFD, SPW47N65C3, IRF740, IRF1010EZ, IRF1010EZL, IRF1010EZS, IRF1010Z, IRF1010ZL, IRF1010ZS, IRF1018E, IRF1018ES