All MOSFET. IRF1018E Datasheet

 

IRF1018E Datasheet and Replacement


   Type Designator: IRF1018E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 79 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO220AB
 

 IRF1018E substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF1018E Datasheet (PDF)

 ..1. Size:429K  international rectifier
irf1018epbf irf1018eslpbf irf1018espbf.pdf pdf_icon

IRF1018E

PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl

 ..2. Size:429K  international rectifier
irf1018epbf irf1018espbf irf1018eslpbf.pdf pdf_icon

IRF1018E

PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl

 ..3. Size:246K  inchange semiconductor
irf1018e.pdf pdf_icon

IRF1018E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1018EIIRF1018EFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:658K  infineon
auirf1018es.pdf pdf_icon

IRF1018E

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

Datasheet: SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRFZ44 , IRF1018ES , IRF1018ESL , IRF1104L , IRF1104S , IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P .

History: KF5N50FZA

Keywords - IRF1018E MOSFET datasheet

 IRF1018E cross reference
 IRF1018E equivalent finder
 IRF1018E lookup
 IRF1018E substitution
 IRF1018E replacement

 

 
Back to Top

 


 
.