IRF2903ZS MOSFET Datasheet: N-Ch, 30V, 235A. Full specification with pinout and replacement list

IRF2903ZS Specs and Replacement

Type Designator: IRF2903ZS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 235 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1980 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO263

IRF2903ZS substitution

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IRF2903ZS datasheet

..1. Size:346K international rectifier
irf2903zlpbf irf2903zspbf.pdf pdf_icon

PD - 96098A IRF2903ZSPbF IRF2903ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes the latest D D processing techniques to achieve extremel... See More ⇒

..2. Size:204K inchange semiconductor
irf2903zs.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2903ZS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU... See More ⇒

0.1. Size:705K infineon
auirf2903zs auirf2903zl.pdf pdf_icon

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175 C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie... See More ⇒

6.1. Size:287K international rectifier
irf2903zpbf.pdf pdf_icon

PD -96097A IRF2903ZPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance... See More ⇒