BF901 Specs and Replacement

Type Designator: BF901

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2.35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT143

BF901 substitution

- MOSFET ⓘ Cross-Reference Search

 

BF901 datasheet

 ..1. Size:40K  philips
 bf901 bf901r cnv 3.pdf pdf_icon

BF901

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs November 1992 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R FEATURES QUICK REFERENCE DATA Intended for low voltage operation SYMBOL PARAMETER TYP. MAX. UNIT Short channel trans... See More ⇒

Detailed specifications: BF556B, BF556C, BF805, BF861A, BF861B, BF861C, BF862, BF900, AO4407, BF901R, BF904, BF904A, BF904R, BF904WR, BF905, BF908, BF908R

Keywords - BF901 MOSFET specs

 BF901 cross reference

 BF901 equivalent finder

 BF901 pdf lookup

 BF901 substitution

 BF901 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs