BF901R Datasheet and Replacement
Type Designator: BF901R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2.35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143R
- MOSFET Cross-Reference Search
BF901R Datasheet (PDF)
bf901 bf901r cnv 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF901; BF901RSilicon n-channel dual gateMOS-FETsNovember 1992Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon n-channel dual gate MOS-FETs BF901; BF901RFEATURES QUICK REFERENCE DATA Intended for low voltage operationSYMBOL PARAMETER TYP. MAX. UNIT Short channel trans
Datasheet: BF556C , BF805 , BF861A , BF861B , BF861C , BF862 , BF900 , BF901 , 2N7000 , BF904 , BF904A , BF904R , BF904WR , BF905 , BF908 , BF908R , BF908WR .
History: CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W
Keywords - BF901R MOSFET datasheet
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History: CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W



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