BF901R Specs and Replacement

Type Designator: BF901R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2.35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT143R

BF901R substitution

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BF901R datasheet

 ..1. Size:40K  philips
 bf901 bf901r cnv 3.pdf pdf_icon

BF901R

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs November 1992 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R FEATURES QUICK REFERENCE DATA Intended for low voltage operation SYMBOL PARAMETER TYP. MAX. UNIT Short channel trans... See More ⇒

Detailed specifications: BF556C, BF805, BF861A, BF861B, BF861C, BF862, BF900, BF901, BS170, BF904, BF904A, BF904R, BF904WR, BF905, BF908, BF908R, BF908WR

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