IRF6609 MOSFET Datasheet: N-Ch, 20V, 31A. Full specification with pinout and replacement list

IRF6609 Specs and Replacement

Type Designator: IRF6609

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 1850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: DIRECTFET

IRF6609 substitution

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IRF6609 datasheet

..1. Size:201K international rectifier
irf6609.pdf pdf_icon

PD - 95822 IRF6609 HEXFET Power MOSFET VDSS RDS(on) max Qg l Low Conduction Losses 20V 2.0m @VGS = 10V 46nC l Low Switching Losses 2.6m @VGS = 4.5V l Ideal Synchronous Rectifier MOSFET l Low Profile (... See More ⇒

8.1. Size:265K international rectifier
irf6601.pdf pdf_icon

PD - 94366F IRF6601/IRF6601TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 20V 3.8m @VGS = 10V 30nC l Low Conduction Losses 5.0m @VGS = 4.5V l Low Switching Losses l Low Profile (... See More ⇒

8.2. Size:178K international rectifier
irf6608.pdf pdf_icon

PD - 94727B IRF6608 HEXFET Power MOSFET l Application Specific MOSFETs VDSS RDS(on) max Qg l Ideal for CPU Core DC-DC Converters l Low Conduction Losses 30V 9.0m @VGS = 10V 16nC l Low Switching Losses 11m @VGS = 4.5V l Low Profile (... See More ⇒

8.3. Size:249K international rectifier
irf6602.pdf pdf_icon

PD - 94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 20V 13m @VGS = 10V 12nC l Ideal for CPU Core DC-DC Converters 19m @VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (... See More ⇒