IRF6662 Spec and Replacement
Type Designator: IRF6662
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DIRECTFET
IRF6662 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6662 Specs
irf6662pbf irf6662trpbf.pdf
PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260 C Reflow) 17.5m @ 10V 100V max 20V max Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated Converter Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC... See More ⇒
irf6662.pdf
PD - 97039A IRF6662 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (... See More ⇒
irf6665pbf irf6665trpbf.pdf
PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Key Parameters Features VDS 100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m applications Qg typ. 8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ. 1.9 Low Qrr for better THD... See More ⇒
Detailed specifications: IRF6638 , IRF6641 , IRF6643 , IRF6644 , IRF6645 , IRF6646 , IRF6648 , IRF6655 , NCEP15T14 , IRF6665 , IRF6668 , IRF6674 , IRF6678 , IRF6691 , IRF6706S2 , IRF6708S2 , IRF6709S2 .
Keywords - IRF6662 MOSFET specs
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