IRF6710S2 Specs and Replacement

Type Designator: IRF6710S2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: DIRECTFET

IRF6710S2 substitution

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IRF6710S2 datasheet

 0.1. Size:311K  international rectifier
 irf6710s2trpbf.pdf pdf_icon

IRF6710S2

PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF DirectFET Power MOSFET l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified) l Low Profile (... See More ⇒

 8.1. Size:302K  international rectifier
 irf6711spbf.pdf pdf_icon

IRF6710S2

PD - 96280 IRF6711SPbF IRF6711STRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒

 8.2. Size:256K  international rectifier
 irf6714mpbf.pdf pdf_icon

IRF6710S2

PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant and Halogen Free l Low Profile (... See More ⇒

 8.3. Size:218K  international rectifier
 irf6717mpbf.pdf pdf_icon

IRF6710S2

PD - 97345C IRF6717MPbF IRF6717MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant and Halgen Free VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒

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Detailed specifications: IRF6665, IRF6668, IRF6674, IRF6678, IRF6691, IRF6706S2, IRF6708S2, IRF6709S2, IRF1407, IRF6711S, IRF6712S, IRF6713S, IRF6714M, IRF6715M, IRF6716M, IRF6717M, IRF6718L2

Keywords - IRF6710S2 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs