IRF6894M Datasheet and Replacement
Type Designator: IRF6894M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26 nC
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 1310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: DIRECTFET
IRF6894M substitution
IRF6894M Datasheet (PDF)
irf6894mpbf.pdf

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (
irf6894m.pdf

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (
irf6898mpbf.pdf

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (
irf6893m.pdf

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (
Datasheet: IRF6775M , IRF6785M , IRF6794M , IRF6795M , IRF6797M , IRF6798M , IRF6810S , IRF6811S , 8N60 , IRF6898M , IRF7353D2 , IRF7402 , IRF7413Q , IRF7413Z , IRF7450 , IRF7451 , IRF7452 .
History: SM8A03NSW | BRCS200P012MC
Keywords - IRF6894M MOSFET datasheet
IRF6894M cross reference
IRF6894M equivalent finder
IRF6894M lookup
IRF6894M substitution
IRF6894M replacement
History: SM8A03NSW | BRCS200P012MC



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