All MOSFET. IRF8736 Datasheet

 

IRF8736 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF8736

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm

Package: SO8

IRF8736 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF8736 Datasheet (PDF)

1.1. irf8736pbf-1.pdf Size:240K _international_rectifier

IRF8736
IRF8736

IRF8736PbF-1 HEXFET® Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 4.8 mΩ 2 7 (@V = 10V) GS S D Qg (typical) 17 nC 3 6 S D ID 4 5 18 A G D (@T = 25°C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack

4.1. irf8734pbf.pdf Size:273K _international_rectifier

IRF8736
IRF8736

PD - 96226 IRF8734PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 3.5m @VGS = 10V 30V 20nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Volt

5.1. irf8714pbf-1.pdf Size:237K _international_rectifier

IRF8736
IRF8736

IRF8714PbF-1 HEXFET® Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 8.7 mΩ 2 7 (@V = 10V) S D GS Qg (typical) 8.1 nC 3 6 S D ID 4 5 14 A G D (@T = 25°C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout

5.2. irf8707pbf-1.pdf Size:234K _international_rectifier

IRF8736
IRF8736

IRF8707PbF-1 HEXFET® Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 11.9 2 7 (@V = 10V) S D GS mΩ RDS(on) max 3 6 S D 17.5 (@V = 4.5V) GS 4 5 G D Qg (typical) 6.2 nC SO-8 ID Top View 11.0 A (@T = 25°C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing R

5.3. irf8721pbf.pdf Size:229K _international_rectifier

IRF8736
IRF8736

PD - 97119 IRF8721PbF HEXFET® Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor 8.5m 30V :@VGS = 10V 8.3nC Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A Benefits 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Impedance 4 5 G D l Ful

5.4. irf8788pbf.pdf Size:228K _international_rectifier

IRF8736
IRF8736

PD - 97137A IRF8788PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power 30V 2.8m l Synchronous Rectifier MOSFET for :@VGS = 10V 44nC Isolated DC-DC Converters Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4

Datasheet: IRF8327S , IRF8707 , IRF8707G , IRF8714 , IRF8714G , IRF8721 , IRF8721G , IRF8734 , 2SK2545 , IRF8788 , IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G .

 


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