All MOSFET. IRFB3307Z Datasheet

 

IRFB3307Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB3307Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 128 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 79 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220AB

 IRFB3307Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3307Z Datasheet (PDF)

 ..1. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

IRFB3307Z IRFB3307Z

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 ..2. Size:316K  infineon
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

IRFB3307Z IRFB3307Z

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 ..3. Size:246K  inchange semiconductor
 irfb3307z.pdf

IRFB3307Z IRFB3307Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307ZFEATURESStatic drain-source on-resistance:RDS(on) 5.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

 0.1. Size:243K  international rectifier
 irfb3307zgpbf.pdf

IRFB3307Z IRFB3307Z

PD - 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

 6.1. Size:140K  international rectifier
 irfb3307pbf.pdf

IRFB3307Z IRFB3307Z

PD - 95706CIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize

 6.2. Size:245K  inchange semiconductor
 irfb3307.pdf

IRFB3307Z IRFB3307Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307 IIRFB3307FEATURESStatic drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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