BF989 Datasheet and Replacement
Type Designator: BF989
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
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BF989 Datasheet (PDF)
bf989 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
bf989.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
Datasheet: BF965 , BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , IRF520 , BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 .
History: FK10SM-10 | CS20N50ANH | DMNH10H028SCT | SWH040R03VLT | AP92U03GJ-HF | YTF541 | IRLS4030
Keywords - BF989 MOSFET datasheet
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History: FK10SM-10 | CS20N50ANH | DMNH10H028SCT | SWH040R03VLT | AP92U03GJ-HF | YTF541 | IRLS4030
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