BF989 MOSFET. Datasheet pdf. Equivalent
Type Designator: BF989
Marking Code: M89_MA_MAp
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 0.03 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1.8 pF
Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
Package: SOT143
BF989 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF989 Datasheet (PDF)
bf989.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
bf989 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
Datasheet: BF965 , BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , P75N02LDG , BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 .
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