BF989 Specs and Replacement
Type Designator: BF989
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 1.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
BF989 substitution
- MOSFET ⓘ Cross-Reference Search
BF989 datasheet
bf989 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
bf989.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
Detailed specifications: BF965 , BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , IRLB3034 , BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 .
Keywords - BF989 MOSFET specs
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