BF989 Datasheet and Replacement
Type Designator: BF989
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
BF989 substitution
BF989 Datasheet (PDF)
bf989 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
bf989.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
Datasheet: BF965 , BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , 60N06 , BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 .
History: IPB140N08S4-04 | 2SJ117 | FQB55N10 | 2SJ360 | IRF620S | WMN14N65C4 | 2SK3883-01
Keywords - BF989 MOSFET datasheet
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History: IPB140N08S4-04 | 2SJ117 | FQB55N10 | 2SJ360 | IRF620S | WMN14N65C4 | 2SK3883-01
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