BF989S Datasheet and Replacement
Type Designator: BF989S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
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BF989S Datasheet (PDF)
bf989 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
bf989.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF989N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF989FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
Datasheet: BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , BF989 , IRLZ44N , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S .
History: PJM2302NSA-S | FQB6N50 | IPI80N06S2L-05 | AP15TN1R5N
Keywords - BF989S MOSFET datasheet
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History: PJM2302NSA-S | FQB6N50 | IPI80N06S2L-05 | AP15TN1R5N
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