BF989S MOSFET. Datasheet pdf. Equivalent
Type Designator: BF989S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 0.03 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 0.8 pF
Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
Package: SOT143
BF989S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF989S Datasheet (PDF)
5.1. bf989 2.pdf 
Size:51K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes b
5.2. bf989.pdf Size:66K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes b
Datasheet: BF966 , BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , BF989 , 2N5485 , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S .
