BF990A Datasheet and Replacement
Type Designator: BF990A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
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BF990A Datasheet (PDF)
bf990a 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF990AN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF990AFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
bf990a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF990AN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF990AFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
Datasheet: BF980 , BF980A , BF981 , BF982 , BF988 , BF989 , BF989S , BF990 , SPW47N60C3 , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR , BF995 .
History: HM4468T | IXTA220N075T7 | HCS60R260ST | HMS8N65D | AP60T03GH | FKG1020 | FDS86252
Keywords - BF990A MOSFET datasheet
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History: HM4468T | IXTA220N075T7 | HCS60R260ST | HMS8N65D | AP60T03GH | FKG1020 | FDS86252
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