BF997 Datasheet. Specs and Replacement

Type Designator: BF997  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT143

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BF997 datasheet

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BF997

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒

 ..2. Size:42K  philips
 bf997.pdf pdf_icon

BF997

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒

Detailed specifications: BF993, BF994, BF994S, BF994SR, BF995, BF996, BF996S, BF996SR, IRF3205, BF998, BF998R, BF998WR, BFC10, BFC11, BFC12, BFC13, BFC14

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