BF997 MOSFET. Datasheet pdf. Equivalent
Type Designator: BF997
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 17 V
Maximum Drain Current |Id|: 0.03 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1 pF
Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
Package: SOT143
BF997 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF997 Datasheet (PDF)
1.1. bf997.pdf 
Size:42K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes b
1.2. bf997 2.pdf Size:31K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes b
Datasheet: BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , IRFZ44N , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 .
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