BF997 Specs and Replacement
Type Designator: BF997
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
BF997 substitution
BF997 Specs
bf997 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
bf997.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
Detailed specifications: BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , IRF3205 , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 .
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