All MOSFET. BF997 Datasheet

 

BF997 Datasheet and Replacement


   Type Designator: BF997
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT143
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BF997 Datasheet (PDF)

 ..1. Size:31K  philips
 bf997 2.pdf pdf_icon

BF997

DISCRETE SEMICONDUCTORSDATA SHEETBF997N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF997FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio

 ..2. Size:42K  philips
 bf997.pdf pdf_icon

BF997

DISCRETE SEMICONDUCTORSDATA SHEETBF997N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF997FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio

Datasheet: BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , IRF3205 , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 .

History: SSF5N60F | RFD16N05SM | BUK7L06-34ARC | PH3855L | IXFH9N80 | PJS6403 | FHD100N03A

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