2N6794JANT Datasheet. Specs and Replacement

Type Designator: 2N6794JANT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO205AF

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2N6794JANT datasheet

 8.1. Size:230K  international rectifier
 2n6794u.pdf pdf_icon

2N6794JANT

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.... See More ⇒

 8.2. Size:128K  international rectifier
 2n6794 irff420.pdf pdf_icon

2N6794JANT

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒

 8.3. Size:23K  semelab
 2n6794.pdf pdf_icon

2N6794JANT

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED ... See More ⇒

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Detailed specifications: 2N6792JANT, 2N6792JANTX, 2N6792JANTXV, 2N6792SM, 2N6793, 2N6793LCC4, 2N6793-SM, 2N6794, IRF9540N, 2N6794JANTX, 2N6794JANTXV, 2N6794SM, 2N6795, 2N6795-SM, 2N6796, 2N6796JANTX, 2N6796JANTXV

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