AUIRF2903Z MOSFET Datasheet: N-Ch, 30V, 260A. Full specification with pinout and replacement list

AUIRF2903Z Specs and Replacement

   Type Designator: AUIRF2903Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 260 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO220AB

AUIRF2903Z substitution

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AUIRF2903Z datasheet

..1. Size:419K infineon
auirf2903z.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175 C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu... See More ⇒

0.1. Size:705K infineon
auirf2903zs auirf2903zl.pdf pdf_icon

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175 C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie... See More ⇒

6.1. Size:293K international rectifier
auirf2907zs-7p.pdf pdf_icon

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m l 175 C Operating Temperature G l Fast Switching max. 3.8m S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot... See More ⇒

6.2. Size:287K international rectifier
auirf2907z.pdf pdf_icon

PD - 97545 AUTOMOTIVE GRADE AUIRF2907Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 75V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.5m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 170A Tjmax S ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified * ... See More ⇒