BFT46 Datasheet. Specs and Replacement

Type Designator: BFT46

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.01 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm

Package: SOT23

BFT46 substitution

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BFT46 datasheet

 ..1. Size:47K  philips
 bft46 cnv 2.pdf pdf_icon

BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low leve... See More ⇒

 ..2. Size:209K  philips
 bft46 cnv.pdf pdf_icon

BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage... See More ⇒

 0.1. Size:10K  semelab
 bft46dcsm.pdf pdf_icon

BFT46

BFT46DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 250V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0... See More ⇒

Detailed specifications: BFC52, BFC61, BFC62, BFC63, BFR30, BFR31, BFR84, BFS28R, IRFP260, BS107P, BS107PT, BS108, BS170, BS170F, BS170P, BS250F, BS250P

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