BFT46
MOSFET. Datasheet pdf. Equivalent
Type Designator: BFT46
Marking Code: M3_M3p
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 0.01
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 1.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 300
Ohm
Package:
SOT23
BFT46
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BFT46
Datasheet (PDF)
..1. Size:47K philips
bft46 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBFT46N-channel silicon FETDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel siliconepitaxial planar junction field-effecttransistor in a microminiature plasticenvelope. The transistor is intendedfor low leve
..2. Size:209K philips
bft46 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT46N-channel silicon FETProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3handbook, halfpage
0.1. Size:10K semelab
bft46dcsm.pdf
BFT46DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 250V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0
Datasheet: BFC52
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