IRF7701G Datasheet. Specs and Replacement

Type Designator: IRF7701G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TSSOP8

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IRF7701G substitution

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IRF7701G datasheet

 ..1. Size:236K  international rectifier
irf7701gpbf.pdf pdf_icon

IRF7701G

PD - 96146A IRF7701GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 0.011@VGS = -4.5V -10A l Low Profile (... See More ⇒

 7.1. Size:141K  international rectifier
irf7701.pdf pdf_icon

IRF7701G

PD - 93940 IRF7701 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (... See More ⇒

 8.1. Size:234K  international rectifier
irf7705gpbf.pdf pdf_icon

IRF7701G

PD- 96142A IRF7705GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -30V 18 @VGS = -10V -8.0A l Low Profile ( ... See More ⇒

 8.2. Size:234K  international rectifier
irf7705pbf.pdf pdf_icon

IRF7701G

PD-96022A IRF7705PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 18 @VGS = -10V -8.0A l Very Small SOIC Package 30 @VGS = -4.5V -6.0A l Low Profile ( ... See More ⇒

Detailed specifications: IRF7342D2, IRF7404Q, IRF7410, IRF7416Q, IRF7420, IRF7424, IRF7425, IRF7700G, K3569, IRF7702, IRF7702G, IRF7703G, IRF7704, IRF7704G, IRF7705, IRF7705G, IRF7706

Keywords - IRF7701G MOSFET specs

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