IRF7701G PDF and Equivalents Search

 

IRF7701G Specs and Replacement

Type Designator: IRF7701G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1520 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TSSOP8

IRF7701G substitution

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IRF7701G datasheet

 ..1. Size:236K  international rectifier
irf7701gpbf.pdf pdf_icon

IRF7701G

PD - 96146A IRF7701GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 0.011@VGS = -4.5V -10A l Low Profile (... See More ⇒

 7.1. Size:141K  international rectifier
irf7701.pdf pdf_icon

IRF7701G

PD - 93940 IRF7701 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (... See More ⇒

 8.1. Size:234K  international rectifier
irf7705gpbf.pdf pdf_icon

IRF7701G

PD- 96142A IRF7705GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -30V 18 @VGS = -10V -8.0A l Low Profile ( ... See More ⇒

 8.2. Size:234K  international rectifier
irf7705pbf.pdf pdf_icon

IRF7701G

PD-96022A IRF7705PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 18 @VGS = -10V -8.0A l Very Small SOIC Package 30 @VGS = -4.5V -6.0A l Low Profile ( ... See More ⇒

Detailed specifications: IRF7342D2 , IRF7404Q , IRF7410 , IRF7416Q , IRF7420 , IRF7424 , IRF7425 , IRF7700G , IRF520 , IRF7702 , IRF7702G , IRF7703G , IRF7704 , IRF7704G , IRF7705 , IRF7705G , IRF7706 .

Keywords - IRF7701G MOSFET specs

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