IRFH9310 Datasheet. Specs and Replacement
Type Designator: IRFH9310 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: PQFN5X6
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IRFH9310 datasheet
irfh9310pbf.pdf
IRFH9310PbF HEXFET Power MOSFET VDS -30 V 6 mm S RDS(on) max 4.6 m S D (@VGS = 10V) S D Qg (typical) 110 nC G D RG (typical) 2.8 D ID PQFN -21 A (@TA = 25 C) 5mm x 6mm Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Low RDSon ( 4.6m ) Lower Conduction Losses results... See More ⇒
irfh9310.pdf
IRFH9310 P-Channel Enhancement Mode MOSFET Description The IRFH9310 uses advanced trench technology to G S S provide excellent R , low gate charge and DS(ON) S D D D operation with gate voltages as low as 4.5V. This D G S device is suitable for use as a S S Pin 1 Battery protection or in other Switching application. DFN5X6-8L General Features D V = -30V I =-90A ... See More ⇒
Detailed specifications: IRF9321, IRF9328, IRF9332, IRF9333, IRF9335, IRF9388, IRF9392, IRF9393, AO4407, IRFHM9331, IRFHS9301, IRFR9024NC, IRFTS9342, IRLHS2242, IRLIB9343, IRLML2244, IRLML2246
Keywords - IRFH9310 MOSFET specs
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