All MOSFET. IRFH9310 Datasheet

 

IRFH9310 Datasheet and Replacement


   Type Designator: IRFH9310
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: PQFN5X6
 

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IRFH9310 Datasheet (PDF)

 ..1. Size:289K  1
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IRFH9310

IRFH9310PbFHEXFET Power MOSFETVDS-30 V6 mmSRDS(on) max 4.6 m SD(@VGS = 10V)SDQg (typical)110nC GDRG (typical)2.8DID PQFN-21 A(@TA = 25C) 5mm x 6mmApplications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesLow RDSon ( 4.6m) Lower Conduction Lossesresults

 ..2. Size:766K  cn evvo
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IRFH9310

IRFH9310P-Channel Enhancement Mode MOSFETDescription The IRFH9310 uses advanced trench technology to GSSprovide excellent R , low gate charge and DS(ON)SDDDoperation with gate voltages as low as 4.5V. This DGSdevice is suitable for use as a SSPin 1Battery protection or in other Switching application. DFN5X6-8LGeneral Features D V = -30V I =-90A

Datasheet: IRF9321 , IRF9328 , IRF9332 , IRF9333 , IRF9335 , IRF9388 , IRF9392 , IRF9393 , 2SK3918 , IRFHM9331 , IRFHS9301 , IRFR9024NC , IRFTS9342 , IRLHS2242 , IRLIB9343 , IRLML2244 , IRLML2246 .

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