BSR57 Datasheet. Specs and Replacement

Type Designator: BSR57  📄📄 

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: SOT23

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BSR57 datasheet

 ..1. Size:33K  philips
 bsr56 bsr57 bsr58.pdf pdf_icon

BSR57

DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in th... See More ⇒

 ..2. Size:43K  fairchild semi
 bsr57.pdf pdf_icon

BSR57

BSR57 N-Channel Low-Frequency Low-Noise 3 Amplifier This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark M5 1. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VDGO Drain-Gate Voltage 40 V VGSO Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA Pt... See More ⇒

Detailed specifications: BS170P, BS250F, BS250P, BS270, BSN254, BSN254A, BSP92, BSR56, NCEP15T14, BSR58, BSS100, BSS110, BSS123, BSS123A, BSS138, BSS84, BUK100-50DL

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