All MOSFET. BSR57 Datasheet

 

BSR57 Datasheet and Replacement


   Type Designator: BSR57
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: SOT23
 

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BSR57 Datasheet (PDF)

 ..1. Size:33K  philips
 bsr56 bsr57 bsr58.pdf pdf_icon

BSR57

DISCRETE SEMICONDUCTORSDATA SHEETBSR56; BSR57; BSR58N-channel FETsApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel FETs BSR56; BSR57; BSR58DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors in a plastic microminiatureenvelope intended for application inth

 ..2. Size:43K  fairchild semi
 bsr57.pdf pdf_icon

BSR57

BSR57N-Channel Low-Frequency Low-Noise 3Amplifier This device is designed for low-power chopper or switching application sourced from process 512SOT-231Mark: M51. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVDGO Drain-Gate Voltage 40 VVGSO Gate-Source Voltage - 40 VIGF Forward Gate Current 50 mAPt

Datasheet: BS170P , BS250F , BS250P , BS270 , BSN254 , BSN254A , BSP92 , BSR56 , IRFP450 , BSR58 , BSS100 , BSS110 , BSS123 , BSS123A , BSS138 , BSS84 , BUK100-50DL .

History: IPD60R650CE

Keywords - BSR57 MOSFET datasheet

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