IRF7303Q MOSFET Datasheet: N-Ch, 30V, 4.9A. Full specification with pinout and replacement list

IRF7303Q Specs and Replacement

Type Designator: IRF7303Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO8

IRF7303Q substitution

- MOSFET ⓘ Cross-Reference Search

IRF7303Q datasheet

0.1. Size:578K 1
auirf7303q.pdf pdf_icon

... See More ⇒

7.1. Size:111K international rectifier
irf7303.pdf pdf_icon

PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 30V Dual N-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 RDS(on) = 0.050 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq... See More ⇒

7.2. Size:230K international rectifier
irf7303pbf.pdf pdf_icon

PD - 95177 IRF7303PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel Mosfet S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.050 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc... See More ⇒

7.3. Size:833K cn vbsemi
irf7303tr.pdf pdf_icon