IRFI4019H-117P MOSFET Datasheet: N-Ch, 150V, 8.7A. Full specification with pinout and replacement list

IRFI4019H-117P Specs and Replacement

Type Designator: IRFI4019H-117P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO220FP-5PIN

IRFI4019H-117P substitution

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IRFI4019H-117P datasheet

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PD - 96274 IRFI4019HG-117P DIGITAL AUDIO MOSFET Features Key Parameters Integrated Half-Bridge Package VDS 150 V Reduces the Part Count by Half m RDS(ON) typ. @ 10V 80 Facilitates Better PCB Layout Qg typ. 13 nC Key Parameters Optimized for Class-D Qsw typ. 4.1 nC Audio Amplifier Applications RG(int) typ. 2.5 Low RDS(ON) for Improved Efficiency TJ max 150 C... See More ⇒

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PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features VDS 55 V Integrated half-bridge package RDS(ON) typ. @ 10V m 48 Reduces the part count by half Qg typ. 8.9 nC Facilitates better PCB layout Qsw typ. 4.3 nC Key parameters optimized for Class-D RG(int) typ. 2.3 audio amplifier applications TJ max 150 C Low RDS(ON) for improved ... See More ⇒