Справочник MOSFET. IRFI4019H-117P

 

IRFI4019H-117P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFI4019H-117P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 18 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 6.6 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO220FP-5PIN

 Аналог (замена) для IRFI4019H-117P

 

 

IRFI4019H-117P Datasheet (PDF)

 ..1. Size:290K  1
 irfi4019h-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

 ..2. Size:290K  infineon
 irfi4019h-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

 5.1. Size:268K  1
 irfi4019hg-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 96274IRFI4019HG-117PDIGITAL AUDIO MOSFETFeatures Key Parameters Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by HalfmRDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150 C

 8.1. Size:254K  1
 irfi4024h-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 97254DIGITAL AUDIO MOSFETIRFI4024H-117PKey Parameters gFeaturesVDS55 V Integrated half-bridge packageRDS(ON) typ. @ 10V m:48 Reduces the part count by halfQg typ.8.9 nC Facilitates better PCB layoutQsw typ.4.3 nC Key parameters optimized for Class-DRG(int) typ. 2.3 audio amplifier applicationsTJ max150 C Low RDS(ON) for improved

 8.2. Size:200K  1
 irfi4020h-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

 8.3. Size:200K  infineon
 irfi4020h-117p.pdf

IRFI4019H-117P IRFI4019H-117P

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BLP03N10-T

 

 
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